Section one: Contracting authority
one.1) Name and addresses
University of Strathclyde
Learning & Teaching Building, 49 Richmond Street
Glasgow
G1 1XU
Contact
Rene de Sousa
Country
United Kingdom
NUTS code
UKM82 - Glasgow City
Internet address(es)
Main address
Buyer's address
https://www.publiccontractsscotland.gov.uk/search/Search_AuthProfile.aspx?ID=AA00113
one.2) Information about joint procurement
The contract is awarded by a central purchasing body
one.3) Communication
Additional information can be obtained from the above-mentioned address
one.4) Type of the contracting authority
Body governed by public law
one.5) Main activity
Education
Section two: Object
two.1) Scope of the procurement
two.1.1) Title
Supply and Commissioning of an Inductively Coupled Plasma Etcher
Reference number
UOS-36338-2025
two.1.2) Main CPV code
- 38000000 - Laboratory, optical and precision equipments (excl. glasses)
two.1.3) Type of contract
Supplies
two.1.4) Short description
An Inductively Coupled Plasma Etcher is sought to process semiconductor materials such as (but not limited to) Gallium Nitride and Silicon. The ideal system will be deployed for academic research and located within a cleanroom micro-fabrication facility.
two.1.6) Information about lots
This contract is divided into lots: No
two.2) Description
two.2.2) Additional CPV code(s)
- 31712100 - Microelectronic machinery and apparatus
two.2.3) Place of performance
NUTS codes
- UKM82 - Glasgow City
Main site or place of performance
University of Strathclyde
two.2.4) Description of the procurement
The Institute of Photonics is seeking to complement their cleanroom micro-fabrication facility equipment with an Inductively Coupled Plasma Etcher. The system will be used to process semiconductor materials typically (but not limited to) Gallium Nitride (GaN) and Silicon (Si) passive and active devices. The system will be employed for academic research. It is purposed to bring extra capability to already existing assets.
The system sought after is destined to provide the capability of chlorinated and fluorinated distinct plasma etchings. Chlorine-based etch rates for GaN should be in the order of few hundreds of nanometres per minute (c.a. 500 nm/min). Selectivity to typical masking material such as photoresist and silica (SiO2) should be guaranteed. Fluorinated-based plasma in a Deep Reactive Ion Etching mode of Silicon should be provisioned to execute the Bosch process.
The system should allow the load-lock handling and processing of a single 4” wafer.
two.2.14) Additional information
The University is publishing this PIN for initial Market Research and Engagement purposes. The University may conduct further market engagement with the suppliers that note interest in this opportunity.
two.3) Estimated date of publication of contract notice
12 March 2025
Section four. Procedure
four.1) Description
four.1.8) Information about the Government Procurement Agreement (GPA)
The procurement is covered by the Government Procurement Agreement: Yes
Section six. Complementary information
six.3) Additional information
NOTE: To register your interest in this notice and obtain any additional information please visit the Public Contracts Scotland Web Site at https://www.publiccontractsscotland.gov.uk/Search/Search_Switch.aspx?ID=792877.
(SC Ref:792877)